參數(shù)資料
型號(hào): 2N6790
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 3.5A, 200V, 0.800 Ohm,N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 52K
代理商: 2N6790
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREAS
FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
0
I
D
,
125
1
2
3
4
5
Z
θ
J
,
2
1.0
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
T
1
, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
T
50
10
1
0.051
10
100
1000
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
DC
100ms
100
μ
s
1.0ms
10ms
10
μ
s
0.1
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
50
75
0
100
0
I
D
,
10V
80
μ
s PULSE TEST
4
8V
7V
V
GS
= 6V
5V
4V
8
12
2N6790
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