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參數資料
| 型號： | 2N6782 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數： | 2/7頁 |
| 文件大小： | 91K |
| 代理商： | 2N6782 |
2001 Fairchild Semiconductor Corporation
2N6782 Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specied
2N6782
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5
2.25
A
Pulsed Drain Current (Notes 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
14
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
3.5
A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
14
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
15
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.12
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specications
TC = 25
oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 0.25mA, VGS = 0V
100
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 0.5mA
2
-
4
V
Zero Gate Voltage Drain Current
IDSS
VDS = 100V, VGS = 0V
-
250
A
VDS = 80V, VGS = 0V TC = 125
oC
-
1000
A
On-State Drain Current (Note 2)
VDS(ON)
ID = 3.5A, VGS = 10V
-
2.1
V
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 2.25A, VGS = 10V
-
0.5
0.600
ID = 2.25A, VGS = 10V, TC = 125
oC
-
1.080
Diode Forward Voltage (Note 2)
VSD
TC = 25
oC, I
S = 3.5A, VGS = 0V
0.75
-
1.5
V
Forward Transconductance (Note 2)
gfs
VDS = 5V, ID = 2.25A
1
1.5
3
S
Turn-On Delay Time
td(ON)
VDD 34V, ID = 2.25A, RG = 50
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-
15
ns
Rise Time
tr
-
25
ns
Turn-Off Delay Time
td(OFF)
-
25
ns
Fall Time
tf
-
20
ns
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
60
135
200
pF
Output Capacitance
COSS
40
80
100
pF
Reverse Transfer Capacitance
CRSS
10
20
25
pF
Thermal Resistance Junction to Case
RθJC
-
8.33
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
175
oC/W
Safe Operating Area
SOA
VDS = 80V, ID = 188mA
15
-
W
VDS = 4.28V, ID = 3.5A
15
-
W
Source to Drain Diode Specications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 3.5A, dISD/dt = 100A/s
-
200
-
ns
Reverse Recovered Charge
QRR
TJ = 150
oC, I
SD = 3.5A, dISD/dt = 100A/s
-
1.0
-
C
NOTES:
2. Pulse test: pulse width
≤ 300s, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2N6782
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相關代理商/技術參數 |
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|---|---|
| 2N6782 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
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| 2N6782_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6782_12 | 制造商:MAS 制造商全稱:MAS 功能描述:This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. |
| 2N6782JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
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