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參數(shù)資料
| 型號： | 2N6691 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2N6691 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: -
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
IEBO
2.0
mAdc
Collector-Base Cutoff Current
VCB = 450 Vdc
2N6676, 2N6691
VCB = 650 Vdc
2N6678, 2N6693
ICBO
1.0
mAdc
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 3.0 Vdc
IC = 15 Adc, VCE = 3.0 Vdc
hFE
15
8.0
40
20
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 3.0 Adc
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 15 Adc, IB = 3.0 Adc
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
3.0
10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
150
500
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 11.7 Vdc, IC = 15 Adc
All Types
Test 2
VCE = 30 Vdc, IC = 5.9 Adc
2N6676, 2N6678
Test 3
VCE = 100 Vdc, IC = 0.25 Adc
All Types
Test 4
VCE = 25 Vdc, IC = 7.0 Adc
2N6691, 2N6693
Test 5
VCE = 300 Vdc, IC = 20 mAdc
2N6676, 2N6691
VCE = 400 Vdc, IC = 10 mAdc
2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6692 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 15A 3PIN TO-61 - Bulk |
| 2N6693 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 15A 3PIN TO-61 - Bulk |
| 2N6701 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X |
| 2N6702 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS |
| 2N6703 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current silicon NPN Versawatt Transistors |
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