參數(shù)資料
型號: 2N6661
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓90V,夾斷電流0.9A的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET晶體管(最小漏源擊穿電壓90V的,夾斷電流到0.9A的N溝道增強型MOSFET的晶體管)
文件頁數(shù): 3/4頁
文件大?。?/td> 72K
代理商: 2N6661
2N6661/VN88AFD
Siliconix
P-37655—Rev. B, 25-Jul-94
3
Typical Characteristics (25 C Unless Otherwise Noted)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
I
D
I
D
I
D
r
D
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
T
J
– Junction Temperature ( C)
r
D
(
1.0
0
1.0
2.0
3.0
4.0
5.0
0.8
0.6
0.4
0.2
0
6 V
5 V
4 V
3 V
2 V
T
J
= 25 C
V
GS
= 10 V
0.5
0.4
0.3
0
0
2
10
0.2
0.1
4
6
8
125 C
V
DS
= 15 V
T
J
= –55 C
10
8
6
0
0
0.5
2.5
4
2
1.0
1.5
2.0
V
GS
= 10 V
T
J
= 25 C
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
T
J
= 25 C
V
GS
= 3 V
2.25
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 10 V
7
0
4
8
12
16
20
6
5
4
0
3
2
1
I
D
= 0.1 A
0.5 A
1.0 A
25 C
r
D
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