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參數(shù)資料
| 型號： | 2N6660 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 990 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 2N6660 |
www.vishay.com
2
Document Number: 70223
S-70037-Rev. C, 15-Jan-07
Vishay Siliconix
2N6660JAN/JANTX/JANTXV
Notes:
a. TA = 25 °C unless otherwise noted.
b. FOR DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
≤ 300 s duty cycle ≤ 2 %.
d. Switching time is essentially independent of operating temperature.
e. For typical characteristics curves see the 2N6659/2N6660, VQ1004J/P data sheet.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70223.
SPECIFICATIONSa TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min
Typb
Max
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 10 A
60
75
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
0.8
1.7
2
TC = - 55 °C
2.5
TC = 125 °C
0.3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
TC = 125 °C
± 500
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V
1
A
TC = 125 °C
100
On-State Drain Current
ID(on)
VDS = 10 V, VGS = 10 V
2A
Drain-Source On-Resistancec
rDS(on)
VGS = 5 V, ID = 0.3 A
25
Ω
VGS = 10 V, ID = 1 A
1.3
3
TC = 125 °C
2.4
5.6
Forward Transconductancec
gfs
VDS = 7.5 V, ID = 0.525 A
170
350
mS
Diode Forward Voltage
VSD
IS = 0.99 A, VGS = 0 V
0.7
0.8
1.6
V
Dynamic
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
35
50
pF
Output Capacitance
Coss
25
40
Reverse Transfer Capacitance
Crss
710
Drain-Source Capacitance
Cds
30
Switchingd
Turn-On Time
tON
VDD = 25 V, RL = 23 Ω
ID 1 A, VGEN = 10 V, Rg = 25 Ω
810
ns
Turn-Off Time
tOFF
8.5
10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6660 | 制造商:SOLID STATE 功能描述:MOSFET, N CH, 60V, 1.7A, TO-39 |
| 2N6660_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6660_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| 2N6660-2 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 1.1A 3PIN TO-205AD - Bulk |
| 2N6660C4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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