參數(shù)資料
型號: 2N6517RLRP
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 238K
代理商: 2N6517RLRP
2N6515, 2N6517, 2N6520
http://onsemi.com
122
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
V(BR)CEO
250
350
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
2N6515
2N6517, 2N6520
V(BR)CBO
250
350
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
2N6515, 2N6517
2N6520
V(BR)EBO
6.0
5.0
Vdc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6520
IEBO
50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
hFE
35
20
50
30
50
30
45
20
25
15
300
200
220
200
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.30
0.35
0.50
1.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
0.75
0.85
0.90
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
2.0
Vdc
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
相關(guān)PDF資料
PDF描述
2N6516RL 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6516RLRA 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6516TA 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6517STOF 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N6517STOE 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
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