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參數(shù)資料
| 型號： | 2N6439 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 137K |
| 代理商： | 2N6439 |
ELECTRICAL CHARACTERISTICS* — continued (TC = 25°C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
67
75
pF
BROADBAND FUNCTIONAL TESTS (Figure 6)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 60 W, f = 225–400 MHz)
GPE
7.8
8.5
—
dB
Electrical Ruggedness
(Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1
all phase angles)
ψ
No Degradation in Output Power
—
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz)
GPE
7.8
10
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz)
η
55
—
%
* Indicates JEDEC Registered Data.
Figure 1. 400 MHz Test Amplifier (Narrow Band)
C1
to C4, C11 — 4.0–40 pF
C5
to C8 — 33 pF
C9 — 1000 pF
C10 — 5.0
F
R1 — 15
L1, L2 — 3/16
″ x 1″ Copper Strap
L3 — 1.5
H
L4 — 10
H
L5 — 1 Turn #16 AWG, 5/16
″ I.D.
C8
C7
C3
C9
C10
C4
L2
C5
DUT
C11
C2
L3
L1
R1
L4
C6
L5
VCC = 28 V
C1
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6439MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 2N6441 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6442 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6443 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6444 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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