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參數(shù)資料
| 型號(hào)： | 2N6438 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 2N6438 |
2N6436
2N6437
2N6438
Document Number 3252
Issue 3
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Rthj-case
1.25
Thermal Resistance Junction-case
Max
°C/W
THERMAL DATA
Parameter
Test Conditions
Min.
Typ.
Max. Unit
A
mA
A
mA
A
mA
A
V
—
V
MHz
pF
μs
10
100
10
1.0
10
1.0
10
1.0
50
80
100
120
30
20
120
12
1.0
1.8
2.5
40
700
0.3
1.0
0.25
ICBO
IEBO
ICEX
ICEO
V(BR)CEO*
hFE*
VCE(sat)*
VBE(sat)*
fT
Cob
tr
ts
tf
Collector Cut Off Current
Emitter Cut Off Current
Collector Cut Off Current
Collector Cut off Current
Collector Emitter Breakdown Voltage
DC Current Gain
Collector - Emitter Saturation Voltage
Base Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Rise Time
Storage
Fall Time
VCB = 100V IE = 0
2N6436
VCB = 120V IE = 0
2N6437
VCB = 140V IE = 0
2N6438
VEB = 6V
IC = 0
VCE = 90V
2N6436
VBE (off) =-1.5V TC = 150°C
VCE = 110V
2N6437
VBE (off) =-1.5V TC = 150°C
VCE = 130V
2N6436
VBE (off) =-1.5V TC = 150°C
VCE = 40V IB = 0
2N6436
VCE = 50V IB = 0
2N6437
VCE = 60V IB = 0.
2N6438
2N6436
IC = 50mA
IB = 0 2N6437
2N6438
VCE =2.0V
IC = 0.5A
VCE = 2.0V
IC = 10A
VCE = 2.0V
IC = 25A
IC = 10A
IB = 1.0A
IC = 25A
IB = 2.5A
IC = 10A
IB = 1.0AV
IC = 25A
IB = 2.5A
IC = 1.0A
VCE = 10V
ftest = 10MHz
IE = 0A
VCE = 10V
f = 100kHz
VCC = 80V
IC = 10A
VBE(off) = 6.0V IB1 = 1.0A
VCC = 80V
IC = 10A
VBE(off) = 6.0V IB1 = IB2 =1.0A
ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated)
* Pulse test: Pulse Width
≤ 300μs , Duty Cycle ≤ 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6438.MODR1 | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6438-JQR-BR1 | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6437 | 25 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6439 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 2N6449 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6438JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 |
| 2N6439 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| 2N6439MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 2N6441 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6442 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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