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參數(shù)資料
| 型號： | 2N6427RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 244K |
| 代理商： | 2N6427RLRA |
2N6426*, 2N6427
http://onsemi.com
117
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage, (Note 2)
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
1.0
mAdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
50
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain, (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 500 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
hFE
20,000
10,000
30,000
20,000
14,000
200,000
100,000
300,000
200,000
140,000
CollectorEmitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
VCE(sat)
0.71
0.9
1.2
1.5
Vdc
Base Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
1.52
2.0
Vdc
Base Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
1.24
1.75
Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
5.4
7.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10
15
pF
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hie
100
50
2000
1000
kW
SmallSignal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hfe
20,000
10,000
CurrentGain High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2N6426
2N6427
|hfe|
1.5
1.3
2.4
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
1000
mmhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
NF
3.0
10
dB
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6427RLRAG | 功能描述:達(dá)林頓晶體管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6428 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428ABU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6428ATA | 功能描述:兩極晶體管 - BJT NPN 50V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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