- 您現(xiàn)在的位置：買賣IC網 > PDF目錄31620 > 2N6387 (MOTOROLA INC) 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2N6387 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 164K |
| 代理商： | 2N6387 |
1
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage – @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6387
VCEO(sus) = 80 Vdc (Min) — 2N6388
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc — 2N6387, 2N6388
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
TO–220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
2N6387
2N6388
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
10
15
10
15
Adc
Base Current
IB
250
mAdc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
65
0.52
Watts
W/
_C
Total Power Dissipation
@ TA = 25_C
Derate above 25
_C
PD
2.0
0.016
Watts
W/
_C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.92
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6387/D
Motorola, Inc. 1995
2N6387
2N6388
*Motorola Preferred Device
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 – 80 VOLTS
65 WATTS
*
CASE 221A–06
TO–220AB
REV 7
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6469 | 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6469R1 | 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6472 | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5659 | 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 2N5412 | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-61 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6387_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Silicon Transistors |
| 2N6387G | 功能描述:達林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6388 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。