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參數(shù)資料
| 型號： | 2N6379 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 171K |
| 代理商： | 2N6379 |
2N6379
4
Motorola Bipolar Power Transistor Device Data
,BASE
CURRENT
(
A)
I B
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
200
0.5
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.7 1.0
2.0
3.0
5.0
10
20
50
30
20
2.8
0.5
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
0.5
2.0
1.2
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
4.0
0.01
Figure 10. “On” Voltages
IB, BASE CURRENT (AMP)
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
3.2
2.4
1.6
0.8
VBE, BASE–EMITTER VOLTAGE (VOLTS)
100
70
h
FE
,DC
CURRENT
GAIN
TJ = + 150°C
+ 25
°C
– 55
°C
,COLLECT
OR
CURRENT
(
A)
I C
– 0.2
– 0.1
0
+ 0.1
+ 0.2
– 0.3
– 0.4
– 0.5
VCE = 40 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
7.0
30
TJ = 25°C
IC = 2.0 A
5.0 A
10 A
30 A
V
,VOL
TAGE
(VOL
TS)
+ 3.0
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.7
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+ 2.0
+ 1.0
0
– 1.0
– 2.0
θVB for VBE
*
θVC for VCE(sat)
– 55
°C to +25°C
+ 25
°C to +150°C
*APPLIES FOR IC/IB t
hFE @ VCE + 4.0 V
4
Figure 12. Collector Cut–Off Region
Figure 13. Base Cutoff Region
VBE @ VCE = 4.0 V
2.4
1.6
0.7
1.0
2.0
3.0
5.0
10
20
50
7.0
30
1.0
2.0 3.0
5.0
10
20
50
7.0
30
1000
500
100
50
0.1
10
20
200
0.2
0.5
1.0
2.0
5.0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
– 0.2
– 0.1
0
+ 0.1
+ 0.2
– 0.3
– 0.4
– 0.5
VCE = 40 V
100
°C
25
°C
100
50
10
0.1
20
0.2
0.5
1.0
2.0
5.0
TJ = 150°C
REVERSE
FORWARD
VCE = 4.0 V
VCE = 10 V
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