參數(shù)資料
型號(hào)： 2N6350
廠商： MICROSEMI CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN DARLINGTON POWER SILICON TRANSISTOR
中文描述： Si, SMALL SIGNAL TRANSISTOR, TO-33
文件頁數(shù)： 2/2頁
文件大?。?/td> 55K
代理商： 2N6350
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
V
(BR)
EBO
Min.
6.0
12
Max.
Unit
Vdc
Emitter-Base Breakdown Voltage
I
EB
= 12 mAdc, Base 1 Open
I
EB
= 12 mAdc, Base 2 Open
Collector-Emitter Cutoff Current
V
EB1
= 2.0 Vdc, R
B2E
= 100
, V
CE
= 80 Vdc
V
EB1
= 2.0 Vdc, R
B2E
= 100
, V
CE
= 150 Vdc 2N6351, 2N6353
ON CHARACTERISTICS
(6)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 1.0
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 10 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 1.0
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 10 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, R
B2E
= 100
, I
B1
= 5.0 mAdc
I
C
= 5.0 Adc, R
B2E
= 100
, I
B1
= 10 mAdc
Base-Emitter Voltage
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, R
B2E
= 100
; f = 10 MHz
Output Capacitance
V
CB1
= 10 Vdc, 100 kHz
≤
f
≤
1.0 MHz, Base 2 Open
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
SAFE OPERATING AREA
DC Tests
T
C
= +100
0
C, 1 Cycle, t
≥
1.0 s, t
r
+ t
f
= 10
μ
s, R
B2E
= 100
(See fig 6 for 2N6350, 2N6351)
Test 1
V
CE
= 1.5Vdc, I
C
= 3.3 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 167 mAdc
Test 3
V
CE
= 80 Vdc, I
C
= 35 mAdc
Test 4
V
CE
= 150 Vdc, I
C
= 13 mAdc
T
C
= +100
0
C, 1 Cycle, t
≥
1.0 s, t
r
+ t
f
= 10
μ
s, R
B2E
= 100
(See fig 7 for 2N6352, 2N6353)
Test 1
V
CE
= 5.0Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 10 Vdc, I
C
= 2.5 Adc
Test 3
V
CE
= 80 Vdc, I
C
= 95 mAdc
Test 4
V
CE
= 150 Vdc, I
C
= 35 mAdc
(6) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N6350, 2N6352
I
CEX
1.0
1.0
μ
Adc
2N6350, 2N6352
2N6351, 2N6353
h
FE
2,000
2,000
400
1,000
1,000
200
10,000
10,000
2N6350, 2N6352
2N6351, 2N6353
V
CE(sat)
1.5
2.5
2.5
Vdc
V
BE1(on)
Vdc
h
fe
5.0
25
120
C
obo
pF
t
on
0.5
μ
s
t
off
1.2
μ
s
2N6350, 2N6351
2N6350, 2N6351
2N6350
2N6351
2N6352, 2N6353
2N6352, 2N6353
2N6352
2N6353
120101
Page 2 of 2
相關(guān)PDF資料
PDF描述
2N6351 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6352 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6353 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6362 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2N6364 TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 10A I(C) | SOT-119VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6351 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 150V 5A 4-Pin TO-33 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 150V 5A 4PIN TO-33 - Bulk
2N6351JANTX 制造商:Microsemi Corporation 功能描述:
2N6352 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 80V 5A 4PIN TO-213AA - Bulk
2N6352JANTXV 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 5A 4-Pin(3+Tab) TO-213AA 制造商:Microsemi 功能描述:Trans Darlington NPN 80V 5A 4-Pin(3+Tab) TO-213AA
2N6353 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 150V 5A 4PIN TO-213AA - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*