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參數(shù)資料
| 型號： | 2N6349 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
| 中文描述： | 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6349 |
2N6344, 2N6349
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
R
θ
JC
TL
2.2
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 100
°
C
IDRM,
IRRM
—
—
—
—
10
2.0
μ
A
mA
ON CHARACTERISTICS
*Peak On–State Voltage
(ITM =
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
VTM
—
1.3
1.55
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C
IGT
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C
VGT
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
—
2.0
2.5
2.0
2.5
2.5
3.0
Volts
Gate Non–Trigger Voltage (Continuous dc)
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100
°
C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
VGD
0.2
—
—
Volts
*Holding Current
(VD = 12 Vdc, Gate Open)
(Initiating Current =
TC = 25
°
C
*TC = –40
°
C
200 mA)
IH
—
—
6.0
—
40
75
mA
*Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
tgt
—
1.5
2.0
μ
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80
°
C)
*Indicates JEDEC Registered Data.
dv/dt(c)
—
5.0
—
V/
μ
s
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