參數(shù)資料
型號: 2N6345
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: TRIACS Silicon Bidirectional Triode Thyristors
中文描述: 800 V, 8 A, TRIAC, TO-220AB
文件頁數(shù): 2/6頁
文件大?。?/td> 114K
代理商: 2N6345
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
R
θ
JC
2.2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Blocking Current
(VD = Rated VDRM, gate open) TJ = 25
°
C
TJ = 100
°
C
IDRM
10
2
μ
A
mA
*Peak On-State Voltage
(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2
μ
s)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C All Types
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C 2N6346 thru 49
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2
μ
s)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C All Types
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C 2N6346 thru 49
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100
°
C)
*MT2(+), G(+); MT2(–), G(–) All Types
*MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49
2%)
VTM
1.3
1.55
Volts
IGT
12
12
20
35
50
75
50
75
100
125
mA
VGT
0.2
0.2
0.9
0.9
1.1
1.4
2
2.5
2
2.5
2.5
3
Volts
*Holding Current
(VD = 12 Vdc, Gate Open)
(IT = 200 mA)
*Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
TC = 25
°
C
*TC = –40
°
C
IH
6
40
75
mA
tgt
1.5
2
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80
°
C)
*Indicates JEDEC Registered Data.
dv/dt(c)
5
V/
μ
s
2.0
4.0
6.0
8.0
10
3.0
7.0
6.0
5.0
4.0
1.0
2.0
0
0
IT(RMS), RMS ON-STATE CURRENT (AMP)
α
α
dc
30
°
60
°
90
°
120
°
α
= 180
°
TJ
100
°
C
8.0
α
= CONDUCTION ANGLE
(
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
1.0
2.0
3.0
4.0
5.0
6.0
7.0
96
92
88
84
80
α
= CONDUCTION ANGLE
α
α
IT(RMS), RMS ON-STATE CURRENT (AMP)
100
8.0
0
dc
α
= 30
°
60
°
90
°
120
°
180
°
C
°
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2N6347A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON BIDIRECTIONAL THYRISTORS