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參數(shù)資料
| 型號： | 2N6340 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Power NPN Silicon Transistor(25A，200W，140V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 中文描述： | 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2N6340 |
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
High Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 100 Vdc (Min) — 2N6338
= 120 Vdc (Min) — 2N6339
= 140 Vdc (Min) — 2N6340
= 150 Vdc (Min) — 2N6341
High DC Current Gain —
h
FE
= 30 – 120 @ I
C
= 10 Adc
= 12 (Min) @ I
C
= 25 Adc
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3 ms (Max)
t
s
= 1.0 ms (Max)
t
f
= 0.25 ms (Max)
Complement to 2N6436–38
Emitter–Base Voltage
V
EB
Collector–Emitter Voltage
V
100
120
6.0
140
150
Vdc
Vdc
Peak
@ T
= 25 C
Derate above 25 C
OTemperature Range
I
B
P
D
50
W/
°
C
Collector Current
I
C
200
1.14
–65 to +200
Adc
Base Current
Total Device Dissipation
10
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
T
J
, T
stg
C
θ
JC
0.875
C/W
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 8
1
Publication Order Number:
2N6338/D
2N6338
2N6339
2N6340
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6340X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N6341 | 功能描述:兩極晶體管 - BJT 25A 150V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6341 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 150V TO-3 |
| 2N6341G | 功能描述:兩極晶體管 - BJT 25A 150V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6341X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-204AA |
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