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參數(shù)資料
| 型號(hào)： | 2N6318 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | TO-66, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | 2N6318 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5354
Issue 1
2N6316
2N6318
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Collector – Emitter Sustaining
Voltage *
Collector Cut–off Current
Emitter Cut–off Current
DC Current Gain
Collector – Emitter Saturation
Voltage
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
Output Capacitance
Current Gain – Bandwidth Product
Small Signal Current Gain
Rise Time
Storage Time
Fall Time
80
0.5
0.25
2.0
0.25
1.0
35
20
100
4
1.0
2.0
2.5
1.5
300
4.0
20
0.7
1.0
0.8
V
mA
—
V
pF
MHz
—
S
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
fT
hfe
tr
ts
tf
Notes
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS *
OFF CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
*Pulse test: t
p = 300s , Duty Cycle = 2%
IC = 100mA
IB = 0
VCE = 40V
IB = 0
VCE = 80V
VBE(off) = 1.5V
TC = 150°C
VCB = 80V
IE = 0
VEB = 5V
IC = 0
VCE = 4V
IC = 0.5A
VCE = 4V
IC = 2.5A
VCE = 4V
IC = 7.0A
IC = 4A
IB = 0.4A
IC = 7A
IB = 1.75A
IC = 7A
IB = 1.75A
VCE = 4V
IC = 2.5A
VCB = 10V
IE = 0
f = 1MHz
VCE = 10V
IC = 0.25A
f = 1MHz
VCE = 4V
IC = 0.5A
f = 1kHz
VCC = 30V
IC = 2.5A
IB1 = IB =0.25A
DYNAMIC CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6318R1 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N6316LEADFREE | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6317 | 7 A, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6318 | 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6327 | 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6322 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 30A 3PIN TO-3 - Bulk |
| 2N6323 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 30A 3PIN TO-3 - Bulk |
| 2N6324 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 30A 3PIN TO-63 - Bulk |
| 2N6325 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 30A 3PIN TO-63 - Bulk |
| 2N6326 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 30A 3PIN TO-3 - Bulk 制造商:GE-RCA 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 |
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