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參數(shù)資料
| 型號(hào)： | 2N6251 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2N6251 |
Data Sheet PU10338EJ01V0DS
2
2SC4536
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
5.0
A
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
–
5.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 50 mA
60
–
200
–
RF Characteristics
Insertion Power Gain
S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz
5.5
7.2
–
dB
Noise Figure (1)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 500 MHz
–
1.5
–
dB
Noise Figure (2)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 1 GHz
–
2.0
–
dB
2nd Order Intermoduration Distortion
IM2
VCE = 10 V, IC = 50 mA, RS = RL = 75
,
VO = 105 dB
V/75 , f1 = 190 MHz,
f2 = 90 MHz, f = f1
f2
–
59.0
–
dBc
3rd Order Intermoduration Distortion
IM3
VCE = 10 V, IC = 50 mA, RS = RL = 75
,
VO = 105 dB
V/75 , f1 = 190 MHz,
f2 = 200 MHz, f = 2
× f1 f2
–
82.0
–
dBc
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. RS = RL = 50
, tuned
hFE CLASSIFICATION
Rank
QR
QS
Marking
QR
QS
hFE Value
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N6251T1 | 制造商:Microsemi Corporation 功能描述:2N6251T1 - Bulk |
| 2N6253 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N6253_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:HIGH POWER SILICON NPN TRANSISTORS |
| 2N6254 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-3 制造商:Distributed By MCM 功能描述:100V 15A 150W Bec Transistor TO-3 NPN |
| 2N6254 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-3 |
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