- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369050 > 2N6230 (SEMELAB LTD) N FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 2 - 500 MHz; MINIMUM ISOLATION: 25 dB; VSWR: 1.35 MAXIMUM; MAXIMUM INSERTION LOSS: 1.00 dB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N6230 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | N FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 2 - 500 MHz; MINIMUM ISOLATION: 25 dB; VSWR: 1.35 MAXIMUM; MAXIMUM INSERTION LOSS: 1.00 dB |
| 中文描述： | 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 11K |
| 代理商： | 2N6230 |
2N6754
Bipolar NPN Device.
V
CEO
= 500V
I
C
= 10A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
500
V
I
C(CONT)
10
A
h
FE
@ (V
CE
/ I
C
)
8
-
f
t
15M
Hz
P
D
75
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6764 | 100V, 38A, N-Channel, Enhancement Mode Power MOSFET(100V, 38A,N溝道，增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管) |
| 2N6766 | 200V, 30A, N-Channel, Enhancement Mode Power MOSFET(200V, 30A,N溝道，增強(qiáng)模式MOS功率場(chǎng)效應(yīng)管) |
| 2N6768 | 400V, 14A, N-Channel, Enhancement Mode Power MOSFET(400V, 14A,N溝道，增強(qiáng)模式MOS功率場(chǎng)效應(yīng)管) |
| 2N6770 | 500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N溝道，增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管) |
| 2N6782LCC4 | N-Channel Power MOSFET（Vdss：100V，Id(cont)：3.1A，Rds(on)：0.6Ω）(N溝道功率型MOS場(chǎng)效應(yīng)管（Vdss：100V，Id(cont)：3.1A，Rds(on)：0.6Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6231 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 10A 3PIN TO-3 - Bulk 制造商:NJS 功能描述: |
| 2N6232 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-5 - Bulk |
| 2N6233 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 225V 10A 2PIN TO-66 - Bulk 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR TO-66 LAW - Bulk |
| 2N6234 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 275V 5A 2PIN TO-66 - Bulk |
| 2N6235 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 325V 5A 2PIN TO-66 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。