參數(shù)資料
型號(hào)： 2N6212
廠商： MICROSEMI CORP-LAWRENCE
元件分類(lèi)： 功率晶體管
英文描述： 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-213AA
封裝： TO-66, 2 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 56K
代理商： 2N6212
2N6211, 2N6212, 2N6213 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Collector-Emitter Cutoff Current
VCE = 150 Vdc
ICEO
5.0
mAdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc, VBE = 1.5 Vdc
2N6211
VCE = 315 Vdc, VBE = 1.5 Vdc
2N6212
VCE = 360 Vdc, VBE = 1.5 Vdc
2N6213
ICEX
0.5
mAdc
Collector-Base Cutoff Current
VCB = 275 Vdc
2N6211
VCB = 350 Vdc
2N6212
VCB = 400 Vdc
2N6213
ICBO
15
mAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
0.5
mAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.8 Vdc
2N6211
IC = 1.0 Adc, VCE = 3.2 Vdc
2N6212
IC = 1.0 Adc, VCE = 4.0 Vdc
2N6213
IC = 1.0 Adc, VCE = 5.0 Vdc
2N6211
2N6212
2N6213
hFE
10
30
100
175
150
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
2N6211
2N6212
2N6213
VCE(sat)
1.4
1.6
2.0
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
VBE(sat)
1.4
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
4.0
20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
220
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc
ton
0.6
s
Turn-Off Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc
toff
3.1
s
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
All Types
Test 2
VCE = 40 Vdc, IC = 0.875 Adc
All Types
Test 3
VCE = 225 Vdc, IC = 0.034 Adc
2N6211
Test 4
VCE = 300 Vdc, IC = 0.02 Adc
2N6212
Test 5
VCE = 350 Vdc, IC = 0.015 Adc
2N6213
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相關(guān)PDF資料
PDF描述
2N6212 2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-66
2N6213 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66
2N6214 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-213AA
2N6211 2 A, 225 V, PNP, Si, POWER TRANSISTOR, TO-213AA
2N6230 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6213 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 350V 2A 3PIN TO-66 - Bulk 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N Series 350 V 2 A PNP Through Hole Silicon Power Transistor - TO-66
2N6214 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 400V 2A 2PIN TO-66 - Bulk
2N6215 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 2A 3PIN TO-63 - Bulk
2N6216 制造商:undefined 功能描述:
2N6217 制造商:JMNIC 制造商全稱(chēng):Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon NPN Power Transistors
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