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參數資料
| 型號： | 2N6058 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 190K |
| 代理商： | 2N6058 |
2N6052
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.03
0.3
3.0
30
300
ACTIVE–REGION SAFE OPERATING AREA
Figure 5. 2N6058
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. 2N6052, 2N6059
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
10
20
10
5.0
2.0
0.05
50
100
70
I C
,COLLECT
OR
CURRENT
(AMP)
1.0
0.5
0.1
0.2
20
30
50
10
20
10
5.0
2.0
0.05
50
100
70
I C
,COLLECT
OR
CURRENT
(AMP)
1.0
0.5
0.1
0.2
20
30
TJ = 200°C
SECOND BREAKDOWN LIMITED
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
0.1 ms
0.5 ms
TJ = 200°C
1.0 ms
5.0 ms
dc
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transis-
tor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
500
0.1
Figure 7. Small–Signal Current Gain
VR, REVERSE VOLTAGE (VOLTS)
50
1.0
2.0
100
5.0
0.2
0.5
C,
CAP
ACIT
ANCE
(pF)
300
100
70
TJ = 25°C
Cib
200
Cob
3000
1.0
Figure 8. Capacitance
f, FREQUENCY (kHz)
30
2.0
5.0
20
50
1000
100
10
20
50
h
fe
,SMALL–SIGNAL
CURRENT
GAIN
2000
1000
500
200
100
50
200
500
2N6052
2N6058/2N6059
TC = 25°C
VCE = 3.0 V
IC = 5.0 A
2N6052
2N6058/2N6059
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6058 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6058JANTX | 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 12A 3-Pin(2+Tab) TO-3 |
| 2N6058JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N6059 | 功能描述:達林頓晶體管 NPN Darlington LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6059 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR TO-3 |
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