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參數(shù)資料
| 型號： | 2N5961D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 295K |
| 代理商： | 2N5961D27Z |
2N5961
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 5.0 mA, IB = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
8.0
V
ICBO
Collector Cutoff Current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 65
°C
2.0
50
nA
IEBO
Emitter Cutoff Current
VEB = 5.0 V, IC = 0
1.0
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 10
A
VCE = 5.0 V, IC = 100
A
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
100
120
135
150
700
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB =1.0 mA
0.2
V
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 5.0 V, f = 1.0 MHz
4.0
pF
Ceb
Emitter-Base Capacitance
VEB = 0.5 V, f = 1.0 MHz
6.0
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
150
1.0
1000
NF
Noise Figure
VCE = 5.0 V, IC = 10
A,
RS = 10 k
, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 10
A,
RS = 10 k
, f = 10 Hz - 10 kHz
BW = 15.7 kHz
VCE = 5.0 V, IC = 100
A,
RS = 1.0 k
, f = 1.0 kHz
BW = 400 Hz
3.0
6.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5962 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5962 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| 2N5962_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N5962_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5962_D74Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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