參數(shù)資料
型號(hào)： 2N5911
廠商： Vishay Intertechnology,Inc.
英文描述： Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-1pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述： 匹配N(xiāo)溝道場(chǎng)效應(yīng)對(duì)（最小柵源擊穿電壓- 25V的，柵極工作電流，僅為1pA的N溝道結(jié)型場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 79K
代理商： 2N5911
2N5911/5912
2
Siliconix
P-37407—Rev. C, 04-Jul-94
Specifications
a
Limits
2N5911
2N5912
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–35
–25
–25
V
Gate-Source Cutoff Voltage
Saturation Drain Current
c
V
GS(off)
I
DSS
V
DS
=
V
DS
=
V
GS
= –15 V, V
DS
= 0 V
V, I
D
=
V, V
GS
= 0 V
–3.5
–1
–1
15
mA
Gate Reverse Current
I
GSS
–1
pA
T
A
= 150 C
–2
nA
Gate Operating Current
I
G
V
DG
=
V, I
D
=
–1
pA
T
A
=
C
–0.3
nA
Gate-Source Voltage
V
GS
V
DG
= 10 V, I
G
=
–1.5
Gate-Source
Forward Voltage
d
V
GS(F)
I
G
= 1 mA, V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DG
=
V, I
D
=
f = 1 kHz
6
5
5
mS
Common-Source
Output Conductance
g
os
70
S
Common-Source
Forward Transconductance
g
fs
V
DG
=
V, I
D
=
f = 100 MHz
5.8
5
5
mS
Common-Source
Output Conductance
g
os
90
S
Common-Source
Input Capacitance
C
iss
V
DG
=
V, I
D
=
f = 1 MHz
3
pF
Common-Source Reverse
Transfer Capacitance
C
rss
1
Equivalent Input
Noise Voltage
e
n
V
DG
=
V, I
D
=
f = 10 kHz
4
nV
√
Hz
Noise Figure
NF
R
G
= 100 k
0.1
dB
Matching
Differential
Gate-Source Voltage
V
DG
=
V, I
D
=
4
10
15
mV
Gate-Source Voltage
Differential Change
with Temperature
V
DG
=
T
A
= –55 to 125 C
V, I
D
=
V/ C
Saturation Drain
Current Ratio
V
DS
=
V, V
GS
= 0 V
Transconductance Ratio
V
DS
=
V, I
D
=
f = 1 kHz
Differential Gate Current
V
DG
=
V, I
D
=
, T
A
=
C
0.005
nA
Common Mode
Rejection Ratio
d
CMRR
V
DG
= 5 to 10 V, I
D
=
85
dB
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NZF
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2N5912 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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