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參數(shù)資料
| 型號： | 2N5886 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon NPN Power Transistor(25A，200W，80V（集電極-發(fā)射極），補償型硅NPN功率晶體管) |
| 中文描述： | 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 2N5886 |
PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*
http://onsemi.com
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PUBLICATION ORDERING INFORMATION
JAPAN
: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone
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Email
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For additional information, please contact your local
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2N5883/D
Literature Fulfillment
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5886G | 功能描述:兩極晶體管 - BJT 25A 80V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5887 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 7A I(C) | TO-66 |
| 2N5888 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 |
| 2N5889 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 |
| 2N5890 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 7A I(C) | TO-66 |
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