參數(shù)資料
型號： 2N5885
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù)： 2/6頁
文件大?。?/td> 275K
代理商： 2N5885
2N5883 2N5884 2N5885 2N5886
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
2N5883, 2N5885
(IC = 200 mAdc, IB = 0)
2N5884, 2N5886
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N5883, 2N5885
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5984, 2N5886
ICEO
—
2.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5883, 2N5885
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5884, 2N5886
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5883, 2N5885
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5884, 2N5886
ICEX
—
1.0
10
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5883, 2N5885
(VCB = 80 Vdc, IE = 0)
2N5884, 2N5886
ICBO
—
1.0
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (1)
(IC = 10 Adc, VCE = 4.0 Vdc)
DC Current Gain (1)
(IC = 25 Adc, VCE = 4.0 Vdc)
hFE
35
20
4.0
—
100
—
Collector–Emitter Saturation Voltage (1)
(IC = 15 Adc, IB = 1.5 Adc)
Collector–Emitter Saturation Voltage (1)
(IC = 25 Adc, IB = 6.25 Adc)
VCE(sat)
—
1.0
4.0
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 25 Adc, IB = 6.25 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1)
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
4.0
—
MHz
Output Capacitance
2N5883, 2N5884
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2N5885, 2N5886
Cob
—
1000
500
pF
Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)
hfe
20
—
—
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc, IC = 10 Adc,
IB1 = IB2 = 1.0 Adc)
tr
—
0.7
s
Storage Time
(VCC = 30 Vdc, IC = 10 Adc,
IB1 = IB2 = 1.0 Adc)
ts
—
1.0
s
Fall Time
IB1 = IB2 = 1.0 Adc)
tf
—
0.8
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Equivalent Test Circuits
2.0
0.3
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMPERES)
t,
TIME
(
s)
1.0
0.5
0.2
0.07
0.05
0.02
0.5 0.7 1.0
2.0
3.0
5.0 7.0
30
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
0.03
0.3
20
0.1
10
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
tr
td
0.7
+ 2.0 V
0
tr ≤
20 ns
–11 V
10 to 100
s
DUTY CYCLE
≈ 2.0%
RB
RL
VCC
– 30 V
TO SCOPE
tr ≤ 20 ns
VCC
– 30 V
TO SCOPE
tr ≤ 20 ns
RL
RB
+9.0 V
0
–11 V
10 to 100
s
DUTY CYCLE
≈ 2.0%
tr ≤ 20 ns
VBB
+ 7.0 V
3.0
10
3.0
10
TURN–ON TIME
TURN–OFF TIME
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
相關PDF資料
PDF描述
2N5884 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5885 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5886 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5902 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78
2N6485 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
相關代理商/技術參數(shù)
參數(shù)描述
2N5885 LEADFREE 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5885G 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5886 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5886G 功能描述:兩極晶體管 - BJT 25A 80V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5887 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 7A I(C) | TO-66
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