參數(shù)資料
型號: 2N5875
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
封裝: TO-3, 2 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 235K
代理商: 2N5875
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2N5875 Information
Category Transistors
2N5875 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 150#
Maxim um Operating Tem p (шC) : 200х
I(CBO) Max. (A) : 500u
@V(CBO) (V) (Test Condition) : 60
V(CE)sat Max. (V) : 3.0
@I(C) (A) (Test Condition) : 10
@I(B) (A) (Test Condition) : 2.5
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 4.0
@V(CE) (V) (Test Condition) : 4.0
f(T) Min. (Hz) Transition Freq : 4.0M
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e : 700n
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. : 1.0u
t(f) Max. (s) Fall tim e. : 800n
t(off) Max. (s) Off tim e :
Package Style : TO-3
Mounting Style : T
Description :
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we create and test custom transistors and diodes for your special applications, but with our outstanding network of industry partners, we can
supply virtually any existing discrete com ponent, integrated circuit, or other hard-to-find electronic part for all your needs - big or sm all.
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相關(guān)PDF資料
PDF描述
2N5876 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5876 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
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