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參數(shù)資料
| 型號： | 2N5830 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier(NPN通用放大器) |
| 中文描述： | 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2N5830 |
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0 V, I
C
= 0
100
120
5.0
V
V
V
nA
μ
A
nA
50
25
50
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
V
CE
= 5.0 V, I
C
= 1.0 mA
60
80
80
500
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.15
0.2
0.25
0.8
1.0
1.0
0.8
V
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
V
BE(
on
)
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
C
cb
Output Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
4.0
5.0
pF
1.0
h
ie
h
oe
h
fe
Input Impedance
Output Admittance
Small-Signal Current Gain
6.0
40
K
μ
mho
60
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5830_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N5830_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5830_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5831 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIERS |
| 2N5832 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIERS |
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