參數(shù)資料
型號(hào): 2N5795
廠商: MICROSEMI CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP DUAL SILICON TRANSISTOR
中文描述: 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
文件頁數(shù): 2/2頁
文件大小: 127K
代理商: 2N5795
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 100
μ
Adc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 100
μ
Adc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc 2N5796U
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 2.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
15 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
I
B2
=
15 mAdc
1)
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N5795
2N5796
h
FE
h
FE
40
40
40
40
20
20
75
100
100
100
50
50
150
300
V
CE(sat)
0.4
1.6
1.3
2.6
Vdc
V
BE(sat)
Vdc
h
fe
2.0
10
C
obo
8.0
pF
C
ibo
25
pF
t
on
50
η
s
t
off
140
η
s
42203
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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