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參數(shù)資料
| 型號： | 2N5770D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 295K |
| 代理商： | 2N5770D74Z |
2N5770
NPN RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 3.0 mA, IB = 0
15
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 1.0
A, IE = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I
E = 10 A, IC = 0
4.5
V
I
CBO
Collector Cutoff Current
V
CB = 15 V, IE = 0
VCB = 15 V, IE = 0, TA = 150
°C
10
1.0
nA
A
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
VEB = 2.0 V, IC = 0
10
1.0
A
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 3.0 mA
VCE = 10 V, IC = 8.0 mA
20
50
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
1.0
V
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
SMALL SIGNAL CHARACTERISTICS
NF
Noise Figure
IC = 1.0 mA, VCE = 8.0 V,
f = 60 MHz, Rg = 400
6.0
dB
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.7
1.1
pF
Cib
Input Capacitance
VEB = 0.5 V
2.0
pF
hfe
Small-Signal Current Gain
IC = 8.0 mA, VCE = 10 V,
f = 100 MHz
IC = 8.0 mA, VCE = 10 V,
f = 1.0 kHz
9.0
40
18
240
rb’CC
Collector-Base Time Constant
IE = 8.0 mA, VCB = 10 V,
f = 79.8 MHz
3.0
20
pS
FUNCTIONAL TEST
Gpe
Amplifier Power Gain
IC = 6.0 mA, VCB = 12 V,
f = 200 MHz
15
dB
PO
Power Output
VCC = 15 V, IC = 8.0 mA,
30
mW
η
Collector Efficiency
f = 500 MHz
25
%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5771 | 功能描述:兩極晶體管 - BJT Switching Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5771 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| 2N5771_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Switching Transistor |
| 2N5771_D26Z | 功能描述:兩極晶體管 - BJT Switching Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5771_D27Z | 功能描述:兩極晶體管 - BJT Switching Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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