參數(shù)資料
型號(hào): 2N5666U3
廠商: MICROSEMI CORP-LAWRENCE
元件分類(lèi): 功率晶體管
英文描述: 5 A, 200 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 113K
代理商: 2N5666U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095)
Page 1 of 3
DEVICES
LEVELS
2N5664
2N5666
2N5667
JAN
2N5665
2N5666S
2N5667S
JANTX
2N5666U3
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N5664
2N5666, S
2N5665
2N5667, S
Unit
Collector-Emitter Voltage
VCEO
200
300
Vdc
Collector-Base Voltage
VCBO
250
400
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
1.0
Adc
Collector Current
IC
5.0
Adc
2N5664
2N5665
2N5666, S
2N5667, S
2N5666U3
Total
1/
Power Dissipation
@ TA = +25°C
@ TC = +100°C
PT
2.5
30
1.2
15
1.5
35
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N5664, 2N5666
2N5665, 2N5667
V(BR)CER
250
400
Vdc
Emitter-Base Breakdown Voltage
IE = 10μAdc
V(BR)EBO
6.0
Vdc
Collector-Emitter Cutoff Current
VCE = 200Vdc
VCE = 300Vdc
2N5664, 2N5666
2N5665, 2N5667
ICES
0.2
μAdc
Collector-Base Cutoff Current
VCB = 200Vdc
VCB = 250Vdc
2N5664, 2N5666
0.1
1.0
μAdc
mAdc
VCB = 300Vdc
VCB = 400Vdc
2N5665, 2N5667
ICBO
0.1
1.0
μAdc
mAdc
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3
相關(guān)PDF資料
PDF描述
2N5666 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-5
2N5667 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-5
2N5671-JQR-AR1 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5671-JQR 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5671 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5667 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-5 - Bulk
2N5667JAN 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 5A 3-Pin TO-5
2N5667JANTX 制造商:Microsemi Corporation 功能描述:
2N5667N1 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR
2N5667S 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-39 - Bulk