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參數(shù)資料
| 型號(hào)： | 2N5666S |
| 廠(chǎng)商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 |
| 中文描述： | 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2N5666S |
Chip Type 2C5664
Geometry 9221
Polarity NPN
Data S heet No. 2C5664
Generic Packaged Parts:
2N5664, 2N5666
Chip type
2C5664
by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N5664, 2N5666
APPLICATIONS:
Designed for high volt-
age, high speed switching and power
amplifier applications.
Features:
High voltage ratings
Top
Al - 37.5 k min.
Au - 6.5 k nom.
12 mils x 40 mils
12 mils x 30 mils
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
100 mils x 100 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter
BV
CER
BV
EBO
I
CES
h
FE
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10 mA, R = 100 ohms
IE = 10 μA
V
CE
= 200 V, I
E
= 0
I
C
= 500 mA dc, V
CE
= 2.0 V
I
C
= 1.0 A dc, V
CE
= 5.0 V
Min
250
6.0
---
50
25
Max
---
---
0.2
---
75
Unit
V dc
μA
μA
---
---
Electrical Characteristics
T
A
= 25
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N5666SMD | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5666SMD05 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5666U3 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5667 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-5 - Bulk |
| 2N5667JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 5A 3-Pin TO-5 |
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