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參數(shù)資料
| 型號： | 2N5666R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 22K |
| 代理商： | 2N5666R1 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5382
Issue 3
2N5666
2N5667
ELECTRICAL CHARACTERISTICS - 2N5666 (TA = 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
200
6.0
100
0.2
0.1
1.0
0.4
1.0
1.2
1.5
40
120
15
5
120
2.0
7.0
0.25
1.5
IC = 1mA
IE = 10A
VCE = 250V
RB = 100
VCE = 200V
IB = 0
VCB = 200V
VCB = 250V
IC = 3.0A
IB = 0.6A
IC = 5.0A
IB = 1.0A
IC = 3.0A
IB = 0.6A
IC = 5.0A
IB = 1.0A
IC = 0.5A
VCE = 2V
IC = 1.0A
VCE = 5V
IC = 3.0A
VCE = 5V
IC = 5.0A
VCE = 5V
VCB = 10V
IE = 0A
100kHz < f > 1MHz
f = 10MHz
IC = 0.5A
VCE = 5V
IB1 = 30mA
IC = 1.0A
VCC = 100V
IB1 =-IB2 = 50mA
IC = 1.0A
VCC = 30V
V(BR)CEO
Collector – Emitter Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICER
Collector – Emitter Cut-off Current
ICES
Collector – Emitter Cut-off Current
ICBO
Collector – Base Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage*
VBE(sat)
Base – Emitter On Voltage*
hFE
DC Current Gain*
Cobo
Output Capacitance
[hfe]
Small Signal Current Gain
ton
Turn on time
toff
Turn off time
V
A
mA
V
—
pF
—
s
NOTES
* Pulse Test: tp = 300s, δ≤ 2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5667R1 | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5666SMD05 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5666SMD05-JQRR4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5666SMD05R4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5666SMDR4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5666S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 5A 3PIN TO-5 SHORT LEAD - Bulk |
| 2N5666SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5666SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5666U3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5667 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-5 - Bulk |
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