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參數(shù)資料
| 型號： | 2N5656 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Silicon NPN Power Transistor(0.5A，20W，300V（集電極-發(fā)射極），塑料硅NPN功率晶體管) |
| 中文描述： | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-08, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 131K |
| 代理商： | 2N5656 |
2N5655 2N5657
http://onsemi.com
2
Current
Gain
Bandwidth Product (2)
(I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 10 MHz)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
(2) f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
OFF CHARACTERISTICS
Collector
Emitter Sustaining Voltage
(I
C
= 100 mAdc (inductive), L = 50 mH)
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0)
(V
CE
= 250 Vdc, V
EB(off)
= 1.5 Vdc)
CE
EB(off)
(V
CE
= 250 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 100 C)
Collector Cutoff Current
CB
E
Emitter Cutoff Current (V
= 6.0 Vdc, I
= 0)
ON CHARACTERISTICS
DC Current Gain (1)
(I
= 100 mAdc, V
= 10 Vdc)
(I
C
= 250 mAdc, V
CE
= 10 Vdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
C
B
10
MHz
2N5655
2N5657
V
250
350
Vdc
2N5655
(BR)CEO
2N5657
I
0.1
mAdc
0.1
0.1
1.0
f
T
I
CBO
10
μ
Adc
I
Adc
h
FE
15
2.5
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 100 kHz)
C
CE
C
ob
fe
25
pF
1.0
20
Figure 3. Active
Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01
30
40
60
100
200
300 400
600
Second Breakdown Limit
Thermal Limit @ T
C
= 25
°
C
Bonding Wire Limit
I
Curves apply below rated V
CEO
T
J
= 150
°
C
d
c
1.0 ms
0.05
0.02
10
μ
s
2N5655
2N5657
500
μ
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5657 | 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5657G | 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5658 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-59 - Bulk |
| 2N5659 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-111 - Bulk 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:GENERAL 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:NJS 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 |
| 2N5660 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-66 - Bulk |
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