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參數資料
| 型號： | 2N5630 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數： | 3/6頁 |
| 文件大小： | 253K |
| 代理商： | 2N5630 |
2N5630 2N5631 2N6030 2N6031
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
5.0
10
20
50
100
200
500
2000
1000
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
0.02
1.0
2.0
SINGLE PULSE
20
2.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.2
3.0
5.0 7.0
10
20
30
50
200
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
70
1.0
I C
,COLLECT
OR
CURRENT
(AMP)
CURVES APPLY BELOW
RATED VCEO
TJ = 200°C
dc
1.0 ms
0.7
0.5
0.3
2N5630, 2N6030
3.0
100
0.5 ms
50 ms
5.0 ms
2N5631, 2N6031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
t,
TIME
(
s)
PNP
2N6030, 2N6031
5.0
0.2
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.5
0.3
0.7 1.0
2.0
7.0
10
20
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
ts
5.0
0.7
0.5
3.0
NPN
2N5630, 2N5631
tf
4.0
0.2
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.2
0.3
0.7
1.0
2.0
7.0
10
20
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
ts
5.0
0.4
0.5
3.0
tf
0.6
0.3
t,
TIME
(
s)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5631 | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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