- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370043 > 2N5485 (Vishay Intertechnology,Inc.) N-Channel JFET(最小柵源擊穿電壓-25V，最小漏極飽和電流4mA的N溝道結(jié)型場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | 2N5485 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小漏極飽和電流4mA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 25V的，最小漏極飽和電流四毫安的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2N5485 |
2N/SST5484 Series
Siliconix
P-37410—Rev. D, 04-Jul-94
1
N-Channel JFETs
2N5484
2N5485
2N5486
SST5484
SST5485
SST5486
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
2N/SST5484
–0.3 to –3
–25
3
1
2N/SST5485
–0.5 to –4
–25
3.5
4
2N/SST5486
–2 to –6
–25
4
8
Features
Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz – 5485/6
Very Low Noise: 2.5 dB (typ) @
400 MHz – 5485/6
Very Low Distortion
High AC/DC Switch Off-Isolation
Benefits
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
Applications
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Description
The 2N/SST5484 series consists of n-channel JFETs designed
to provide high-performance amplification, especially at high
frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
D
S
G
TO-226AA
(TO-92)
Top View
2N5484
2N5485
2N5486
1
2
3
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25 V
10 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to 150 C
Operating Junction Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
Notes
a.
Derate 2.8 mW/ C above 25 C
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70246.
Applications information may also be obtained via FaxBack, request document #70595 and #70598.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5486 | N-Channel JFET(最小柵源擊穿電壓-25V，最小漏極飽和電流8mA的N溝道結(jié)型場效應(yīng)管) |
| 2N5490 | NPN SILICON POWER TRANSISTORS |
| 2N5492 | NPN SILICON POWER TRANSISTORS |
| 2N5494 | NPN SILICON POWER TRANSISTORS |
| 2N5496 | NPN SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5485_D26Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D26Z_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D74Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D75Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。