參數(shù)資料
型號(hào)： 2N5430
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Power Transistors
中文描述： 7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
封裝： TO-66, 2 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 15K
代理商： 2N5430
BV
CEO (sus)*
Collector – Emitter
Sustaining Voltage
I
CBO
Collector Cutoff Current
I
CEX
Collector Cutoff Current
I
CBO
I
EBO
Collector Cutoff Current
Emitter Cutoff Current
100
V
100
m
A
10
m
A
1.0
mA
10
m
A
100
m
A
Min
Max
Unit
OFF CHARACTERISTICS
Parameter
Test Conditions
I
C
= 50mA , I
B
= 0
V
CE
= 90V , I
B
= 0
V
CE
= 90V , V
EB(off)
= 1.5V
V
CE
= 90V , V
EB(off)
= 1.5V , T
C
= 150°C
V
CB
= Rated V
CB
, I
E
= 0
V
BE
= 6V , I
C
= 0
hFE
*
DC Current Gain
Collector – Emitter
V
CE(sat)*
Saturation Voltage
Base – Emitter
V
BE(sat)*
Saturation Voltage
60
60
240
40
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
—
V
V
I
C
= 500mA , V
CE
= 2V
I
C
= 2A , V
CE
= 2V
I
C
= 5A , V
CE
= 2V
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
Min
Max
Unit
Parameter
Test Conditions
Current Gain
f
T
Bandwidth Product
C
ob
C
ib
Output Capacitance
Input Capacitance
30
MHz
250
pF
1000
pF
DYNAMIC CHARACTERISTICS
Parameter
I
C
= 500 mA, V
CE
= 10V, f = 10 MHz
V
CB
= 10V, I
E
= 0, f = 100 kHz
V
BE
= 2V, I
C
= 0, f = 100 kHz
Test Conditions
Min
Max
Unit
td
tr
ts
tf
Delay Time
V
CC
= 40V, V
EB(off)
= 3V
I
C
= 2A, I
B1
= 200mA
V
CC
= 40V, I
C
= 2A
I
B1
= I
B2
= 200mA
Rise Time
Storage Time
Fall Time
100
ns
100
ns
2.0
m
s
200
ns
SWITCHING CHARACTERISTICS
Parameter
Test Conditions
Min
Max
Unit
* Pulse Test: Pulse width = 300
m
s, Duty Cycle = 2.0 %
Prelim. 1/94
2N5430
LA B
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
2N5430 POWER TRANSISTORS(7A,40W)
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