參數(shù)資料
型號(hào): 2N5416
廠商: STMICROELECTRONICS
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 47K
代理商: 2N5416
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
17.5
175
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
for 2N5415
VCB = -175 V
for 2N5416
VCB = -280 V
-50
A
ICEO
Collector Cut-off
Current (IB = 0)
VCE = -150 V
-50
A
IEBO
Emitter Cut-off Current
(IC = 0)
for 2N5415
VEB = -4 V
for 2N5416
VEB = -6 V
-20
A
VCER
Collector-Emitter
Sustaining Voltage
IC = -50 mA
RBE = 50
for 2N5416
-350
V
VCEO(sus)
Collector-Emitter
Sustaining Voltage
IC = -10 mA
for 2N5415
for 2N5416
-200
-300
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -50 mA
IB = -5 mA
-2.5
V
VBE
Base-Emitter Voltage
IC = -50 mA
VCE = -10 V
-1.5
V
hFE
DC Current Gain
IC = -50 mA
VCE = -10 V
for 2N5415
for 2N5416
30
150
120
hfe
Small Signal Current
Gain
IC = -5 mA
VCE = -10 V
f = 1KHz
25
fT
Transition frequency
IC = -10 mA
VCE = -10 V
f = 5MHz
15
MHz
CCBO
Collector Base
Capacitance
IE = 0
VCB = -10 V
f = 1MHz
25
pF
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
2N5415 / 2N5416
2/4
相關(guān)PDF資料
PDF描述
2N5416S 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5416 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3440 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3439 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N5415 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
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