參數(shù)資料
型號： 2N5415S
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 小信號晶體管
英文描述： PNP LOW POWER SILICON TRANSISTOR
中文描述： 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝： TO-39, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 16K
代理商： 2N5415S
Parameter
Test Conditions
V
CB
= -175V
V
CB
= -280V
V
CE
= -150V
V
EB
= -4V
V
EB
= -6V
I
C
= -10mA
I
C
= -10mA
I
C
= -50mA
I
C
= -50mA
I
C
= -50mA
I
C
= -50mA
I
C
= -50mA
I
C
= -5mA
f = 1KHz
I
E
= 0
f = 1MHz
I
C
= -10mA
f = 5MHz
Min.
Typ.
Max.
-50
-50
-50
-20
-20
Unit
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
R
BE
=50
W
I
B
=-5mA
V
CE
= -10V
V
CE
=-10V
2N5415
V
CE
=-10V
2N5416
V
CE
= -10V
2N5416
V
CB
= -10V
V
CE
= -10V
-200
-300
-350
-0.5
-1.5
150
120
30
30
25
25
15
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CER(sus)*
V
CE(sat)
V
BE*
h
FE*
h
fe
C
cbo
f
T
m
A
m
A
m
A
V
V
V
V
V
—
—
pF
MHz
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
2N5416 PNP LOW POWER SILICON TRANSISTOR
2N5416S PNP LOW POWER SILICON TRANSISTOR
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2N5430 MEDIUM POWER NPN SILICON TRANSISTOR
2N5430 Medium Power NPN Silicon Transistor Designed For Switching and Wide-Band Amplifier Applications(中功率NPN硅晶體管（開關(guān)型和寬波段放大器應(yīng)用）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5415SJAN 制造商:Microsemi Corporation 功能描述:
2N5415UA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 200V 1A 4PIN UA - Bulk
2N5416 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5416 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP RF TO-39
2N5416CSM4 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR
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