參數(shù)資料
型號(hào): 2N5415
廠商: MICROSEMI CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP LOW POWER SILICON TRANSISTOR
中文描述: 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
封裝: TO-5, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 16K
代理商: 2N5415
ABSOLUTE MAXIMUM RATINGS
T
case
= 25°c unless otherwise stated
V
CBO
Collector – Base Voltage (I
E
=0)
V
CEO(sus)
Collector – Emitter Voltage (I
B
=0)
V
EBO
Emitter – Base Voltage (I
C
=0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Device Dissipation atT
A
25°C
T
stg
Storage Temperature
T
J
Junction Temperature
R
th-j-amb
Thermal Resistance Junction - Ambient
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
2N5415S PNP LOW POWER SILICON TRANSISTOR
2N5416 PNP LOW POWER SILICON TRANSISTOR
2N5416S PNP LOW POWER SILICON TRANSISTOR
2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N5430 MEDIUM POWER NPN SILICON TRANSISTOR
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