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參數(shù)資料
| 型號： | 2N5415-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N5415-JQR-B |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCB = -175V
2N5415
VCB = -280V
2N5416
VCE = -150V
VEB = -4V
2N5415
VEB = -6V
2N5416
IC = -10mA
2N5415
IC = -10mA
2N5416
IC = -50mA RBE=50W 2N5416
IC = -50mA IB =-5mA
IC = -50mA VCE = -10V
IC = -50mA VCE =-10V 2N5415
IC = -50mA VCE =-10V 2N5416
IC = -5mA
VCE = -10V
f = 1KHz
IE = 0
VCB = -10V
f = 1MHz
IC = -10mA VCE = -10V
f = 5MHz
-50
-20
-200
-300
-350
-0.5
-1.5
30
150
30
120
25
15
ICBO
ICEO
IEBO
VCEO(sus)*
VCER(sus)*
VCE(sat)
VBE*
hFE*
hfe
Ccbo
fT
mA
V
—
pF
MHz
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Collector Cut Off Current (VE =0)
Emitter Cut Off Current (IB =0)
Emitter Cut Off Current (IC =0)
Collector Emitter on Voltage(IB =0)
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Base-Emitter Voltage
DC Current Gain
Small Signal Current Gain
Collector-Base Capacitance
Transition Frequency
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed: duration = 300
ms, duty cycle 1.5%
相關(guān)PDF資料 |
PDF描述 |
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| 2N5415CSM4G4 | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5416CSM4G4 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5416CSM4-JQR-B | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5415 | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5416 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5415MOT | 制造商:Motorola 功能描述:2N5415 |
| 2N5415S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP LOW POWER SILICON TRANSISTOR |
| 2N5415SJAN | 制造商:Microsemi Corporation 功能描述: |
| 2N5415UA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 200V 1A 4PIN UA - Bulk |
| 2N5416 | 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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