參數(shù)資料
型號(hào): 2N5401H1TA
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 513K
代理商: 2N5401H1TA
Typical Characteristics
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1
1
10
100
1000
170
180
190
200
210
220
RESISTANCE (k )
BV
-BR
E
A
KD
OW
N
V
O
L
T
A
G
E
(
V
)
CE
R
Typical Pulsed Current Gain
vs Collector Current
0.0001
0.001
0.01
0.1
1
0
50
100
150
200
I
- COLLECTOR CURRENT (A)
h
-
TY
P
IC
A
L
P
U
LS
E
D
C
U
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V
= 5V
CE
125 °C
Collector-Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
0
0.1
0.2
0.3
0.4
I
- COLLECTOR CURRENT (mA)
V
-
C
O
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
ESA
T
C
β = 10
125 °C
- 40 °C
25 °C
Base-Emitt er ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
B
A
SE
-E
M
IT
T
ER
O
N
VO
L
T
A
G
E
(
V
)
BE
(O
N)
125 °C
- 40 °C
25 °C
C
V
= 5V
CE
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT ( mA)
V
-
BA
S
E
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
BE
S
A
T
C
β = 10
125 °C
- 40 °C
25 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T
- AM BIENT TE MPE RATURE ( C)
I
-
C
O
L
E
C
T
O
R
CU
RRE
N
T
(n
A)
A
V
= 10 0V
CB
°
CBO
2N5401
/
MMBT5401
PNP General Purpose Amplifier
(continued)
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