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參數(shù)資料
| 型號： | 2N5401 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 965K |
| 代理商： | 2N5401 |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
150
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
160
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
—
50
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
60
50
—
240
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.2
0.5
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
6.0
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
200
—
Noise Figure
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
—
8.0
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
MCC
2N5401
Revision: 4
2006/05/14
TM
Micro Commercial Components
www.mccsemi.com
2 of 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5401 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5401,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5401,412 | 功能描述:兩極晶體管 - BJT TRANS HV BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5401 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| 2N5401/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier Transistors PNP Silicon |
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