參數(shù)資料
型號(hào)： 2N5400RLRP
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： CASE 29-11, TO-226, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 86K
代理商： 2N5400RLRP
2N5400
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
120
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
130
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
ICBO
100
nAdc
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
30
40
180
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
400
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
6.0
pF
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
30
200
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
8.0
dB
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
2N5400
TO92
5000 Unit / Bulk
2N5400G
TO92
(PbFree)
5000 Unit / Bulk
2N5400RLRP
TO92
2000 Tape & Reel
2N5400RLRPG
TO92
(PbFree)
2000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
2N5400TPER1 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5400TPE2 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5401-5 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5400-18 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5401A-BP 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5400RLRPG 功能描述:兩極晶體管 - BJT 500mA 130V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5400S 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR
2N5400S_99 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR
2N5401 功能描述:兩極晶體管 - BJT Bipolar Trans PNP,0.6A,150V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5401 T/R 功能描述:兩極晶體管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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