參數(shù)資料
型號: 2N5400
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: PNP Silicon Amplifier Transistor(120V(集電極-發(fā)射極)硅PNP放大器晶體管)
中文描述: 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 83K
代理商: 2N5400
2N5400, 2N5401
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
2N5400
2N5401
V
(BR)CEO
120
150
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
2N5400
2N5401
V
(BR)CBO
130
160
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100
°
C)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100
°
C)
2N5400
2N5401
2N5400
2N5401
I
CBO
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
50
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
2N5400
2N5401
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
2N5400
2N5401
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
2N5400
2N5401
h
FE
30
50
40
60
40
50
180
240
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
1.0
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
2N5400
2N5401
f
T
100
100
400
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
6.0
pF
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
2N5400
2N5401
h
fe
30
40
200
200
Noise Figure
(I
C
= 250 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k , f = 1.0 kHz)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
NF
8.0
dB
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