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參數(shù)資料
| 型號(hào)： | 2N5339J |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 408K |
| 代理商： | 2N5339J |
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5339
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 50 mA
100
Volts
Collector-Base Cutoff Current
ICBO
VCB = 100 Volts
10
A
Collector-Emitter Cutoff Current
ICEO
VCE = 100 Volts
100
A
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 90Volts, VBE = 1.5Volts
VCE =90Volts, VBE = 1.5Volts,
TA = 150°C
10
A
mA
Emitter-Base Cutoff Current
IEBO
VEB = 6 Volts
100
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
IC = 5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
TA = -55°C
60
40
12
240
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
1.2
1.8
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
0.7
1.2
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 500 mA,
f = 10 MHz
3
15
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
250
pF
Open Circuit Input Capacitance
CIBO
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
1,000
pF
Switching Characteristics
Delay Time
Rise Time
td
tr
IC = 2 A, IB1 = 200 mA
100
ns
Storage Time
Fall Time
ts
tf
IC = 2 mA, IB1=IB2 = 200 mA
2
200
s
ns
Semicoa Corporation
Copyright
2010
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