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參數(shù)資料
| 型號： | 2N5308D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 525K |
| 代理商： | 2N5308D26Z |
2N5308
NPN Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC =10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1
A, I
E = 040V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1
A, I
C = 0
12
V
ICBO
Collector Cutoff Current
VCB = 40 V, IE = 0
VCB = 40 V, IE = 0, TA = 100
°C
0.1
20
A
IEBO
Emitter Cutoff Current
VEB = 12 V, IC = 0
0.1
A
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 100 mA
7,000
20,000
70,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 200 mA, IB = 0.2 mA
1.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 200 mA, IB = 0.2 mA
1.6
V
VBE(on)
Base-Emitter On Voltage
IC = 200 mA, VCE = 5.0 V
1.5
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 10 V, f = 1.0 MHz
10
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 2.0 mA, VCE = 5.0 V,
f = 10 MHz
7,000
6.0
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| 2N5314 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 20A 3PIN TO-61 - Bulk |
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