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參數(shù)資料
| 型號： | 2N5199 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封裝： | HERMETIC SEALED PACKAGE-6 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N5199 |
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-2
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V(BR)GSS
IG = –1 mA, VDS = 0 V
–57
–50
Gate-Source Cutoff Voltage
VGS(off)
VDS = 20 V, ID = 1 nA
–2
–0.7
–4
–0.7
–4
V
Saturation Drain Currentb
IDSS
VDS = 20 V, VGS = 0 V
3
0.7
7
0.7
7
mA
VGS = –30 V, VDS = 0 V
–10
–25
pA
Gate Reverse Current
IGSS
TA = 150_C
–20
–50
nA
VDG = 20 V, ID = 200 mA
–5
–15
pA
Gate Operating Current
IG
TA = 125_C
–0.8
–15
nA
Gate-Source Voltage
VGS
VDG = 20 V, ID = 200 mA
–1.5
–0.2
–3.8
–0.2
–3.8
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = 20 V, VGS = 0 V
2.5
1
4
1
4
mS
Common-Source
Output Conductance
gos
VDS = 20 V, VGS = 0 V
f = 1 kHz
2
50
mS
Common-Source
Forward Transconductance
gfs
VDS = 20 V, ID = 200 mA
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
gos
VDS = 20 V, ID = 200 mA
f = 1 kHz
1
4
mS
Common-Source
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V
3
6
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 20 V, VGS = 0 V
f = 1 MHz
1
2
pF
Equivalent Input Noise Voltage
en
VDS = 20 V, VGS = 0 V, f = 1 kHz
9
20
nV
√Hz
Noise Figure
NF
VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW
0.5
dB
Matching
Differential Gate-Source Voltage
|V
GS1–VGS2
|
VDG = 20 V, ID = 200 mA
5
mV
Gate-Source Voltage Differential
Change with Temperature
D|V
GS1–VGS2
|
DT
VDG = 20 V, ID = 200 mA
TA = –55 to 125_C
5
10
mV/_C
Saturation Drain Current Ratio
I
DSS1
I
DSS2
VDS = 20 V, VGS = 0 V
0.98
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
VDS = 20 V, ID = 200 mA
0.99
0.97
1
0.97
1
Differential Output Conductance
|g
os1–gos2
|
VDS = 20 V, ID = 200 mA
f = 1 kHz
0.1
1
mS
Differential Gate Current
|I
G1–IG2
|
VDG = 20 V, ID = 200 mA , TA = 125_C
0.1
5
nA
Common Mode Rejection Ratioc
CMRR
VDG = 10 to 20 V, ID = 200 mA
100
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5199-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N520 | 制造商:. 功能描述: |
| 2N5200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| 2N5202 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 4A 2PIN TO-66 - Bulk |
| 2N5204 | 功能描述:SCR 600 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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