參數(shù)資料
型號(hào): 2N5195
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Silicon PNP Power Transistor(4A,40W,80V(集電極-發(fā)射極),硅PNP功率晶體管)
中文描述: 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝: CASE 77-09, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 99K
代理商: 2N5195
2N5194 2N5195
http://onsemi.com
5
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE, D = t
1
f =
t1
tP
PEAK PULSE POWER = P
P
Figure A
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find
θ
JC
(t), multiply the value obtained from Figure 12
by the steady state value
θ
JC
.
Example:
The 2N5193 is dissipating 50 watts under the following
conditions: t
1
= 0.1 ms, t
p
= 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t
1
, D) is 0.27.
The peak rise in junction temperature is therefore:
T = r(t) x P
P
x
θ
JC
= 0.27 x 50 x 3.12 = 42.2 C
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