參數(shù)資料
型號: 2N5172
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN General Purpose Amplifier(NPN型通用放大器)
中文描述: 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 2/3頁
文件大?。?/td> 23K
代理商: 2N5172
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 25 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
25
25
5.0
V
V
V
nA
nA
100
100
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(on)
Base-Emitter On Voltage
V
CE
= 10 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
100
500
0.25
1.2
V
V
0.5
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector- Base Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 1.0 kHz
1.6
100
10
750
pF
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
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相關代理商/技術參數(shù)
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2N5172 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor
2N5172_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier
2N5172_D26Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5172_D27Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5172_D74Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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