參數(shù)資料
型號(hào): 2N5152
廠商: MICROSEMI CORP-LAWRENCE
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN POWER SILICON TRANSISTOR
中文描述: SMALL SIGNAL TRANSISTOR, TO-205AD
封裝: TO-39, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 24K
代理商: 2N5152
μA
mA
μA
μA
mA
V
pF
μs
μs
R
thj-case
R
thj-amb
15
175
Parameter
Test Conditions
V
CE
= 60V
V
CE
= 100V
V
CE
= 60V
V
BE
=- 2V
V
CE
= 40V
V
EB
= 5V
V
EB
= 6V
I
C
= 100mA
I
C
= 2.5A
I
C
= 5A
I
C
= 2.5A
I
C
= 5A
I
C
= 2.5A
I
C
= 50mA
I
C
= 2.5A
I
C
= 5A
Tcase= -55°C
I
C
=2.5A
I
E
= 0
f = 1MHz
I
C
= 0.1A
f = 1KHz
I
C
= 0.5A
f = 20MHz
I
C
= 5A
I
B1
= 0.5A
I
C
= 5A
I
B1
=-I
B2
= 0.5A
Min.
Typ.
Max.
1
1
Unit
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
500
50
1
1
80
0.75
1.5
1.45
2.2
1.45
20
30
20
90
15
250
20
3
0.5
1.3
2N5152
2N5154
Prelim. 3/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CES
I
CEV
I
CEO
I
EBO
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
CBO
h
FE
t
on
t
off
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Collector Base Capacitance
Small Signal Current Gain
Turn On Time
Turn Off Time
V
BE
= 0
V
BE
= 0
T
case
= 150°C
I
B
= 0
I
C
= 0
I
C
= 0
I
B
= 0
I
B
= 250mA
I
B
= 500mA
I
B
= 250mA
I
B
= 500mA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5v
V
CE
= 5V
V
CB
= 10V
V
CE
= 5V
V
CE
= 5v
V
CC
= 30v
V
CC
= 30V
ELECTRICAL CHARACTERISTICS FOR 2N5152
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
< 2%
THERMAL DATA
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