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參數(shù)資料
| 型號： | 2N5151L |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N5151L Geometry 9702 Polarity PNP |
| 中文描述： | 類型2N5151L幾何9702極性進步黨 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2N5151L |
Data S heet No. 2N5151L
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 100 mA, I
B
= 0, pulsed
Base-Emitter Cutoff Current
V
EB
= 4 V, I
C
= 0
V
EB
= 5.5 V, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 0
V
CE
= 100 V, V
BE
= 0
V
CE
= 40 V, I
B
= 0
V
CE
= 60 V, V
BE
= +2 V, T
C
= 150
o
C
ON Characteristics
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V, pulsed
I
C
= 5.0 A, V
CE
= 5 V, pulsed
I
C
= 2.55 A, V
CE
= 5 V pulsed, T
C
= -55
o
C
Base-Emitter Voltage, Nonsaturted
V
CE
= 5 V, I
C
= 2.5 A, pulsed
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Symbol
Min
Max
Unit
I
EBO1
I
EBO2
---
---
1.0
1.0
μA
mA
I
CES1
I
CES2
I
CEO
I
CEX
---
---
---
---
1.0
1.0
50
500
Max
μA
mA
μA
μA
Unit
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
(BR)CBO
80
---
Symbol
Min
h
FE1
h
FE2
h
FE3
h
FE4
20
30
20
15
---
90
---
---
---
---
---
---
V
BE
---
1.45
V dc
V
BE(sat)1
V
BE(sat)2
---
---
1.45
2.2
V dc
V dc
V
CE(sat)1
V
CE(sat)2
Symbol
---
---
0.75
1.5
V dc
V dc
Min
Max
Unit
h
fe
20
---
---
C
OBO
---
250
pF
---
|h
fe
|
6.0
---
Switching Time
Delay Time
I
C
= 5 A, I
B1
= 500 mA
Storage Time
I
B2
= -500 mA
Fall Time
V
BE(off)
= 3.7 V
Turn-Off Time
R
L
= 6 ohms
Symbol
Min
Max
Unit
μs
t
ON
---
0.5
t
s
---
1.4
μs
0.5
μs
t
OFF
---
1.5
μs
t
f
---
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